This paper describes small AlGaAs/GaAs HBT's for low-power and high-speed integrated circuits. The device fabrication is based on a new bridged base electrode technology that permits emitter width to be defined down to 1 µm. The new technology features oxygen-ion implantation for emitter-base junction isolation and zinc diffusion for extrinsic base formation. The oxygen-ion implanted emitter-base junction edge has been shown to provide a periphery recombination current much lower than that for the previous proton implanted edgs, the result being a much higher current gain particularly in small devices. The zinc diffusion offers high device yield and good uniformity in device characteristics even for a very thin (0.04 µm) base structure. An HBT with emitter dimensions of 12.4 µm2 yields an fT of 103 GHz and an fmax of 62 GHz, demonstrating that the new technology has a significant advantage in reducing the parasitic elements of small devices. Fabricated one-by-eight static frequency dividers and one-by-four/one-by-five two-modulus prescalers operate at frequencies over 10 GHz. The emitters of HBT's used in the divider are 12.4 µm2 in size, which is the smallest ever reported for AlGaAs/GaAs HBT IC's. These results indicate that the bridged base electrode technology is promising for developing a variety of high-speed HBT IC's.

A compact new test structure using shift register circuits for extracting components of the capacitance matrix of the multi-layer interconnections has been proposed. An extraction method of the capacitance matrix is also presented. As a result of fabrication, capacitance values obtained by measurement are in good agreement with the numerical calculation. We also showed an estimation method of the measurement errors.

This paper describes two promising millimeter-wave measurement techniques suitable for biological materials. One is reflection-geometry imaging using a low-coherence signal, and the other is millimeter-wave ellipsometry. Imaging porcine tissue during the desiccation process, we found the temporal variation of the reflection intensity to be well explained by an exponential decrease of the relative dielectric constant. Ellipsometry results showed that the complex relative dielectric constant also decreased exponentially with time during the desiccation process and that for bovine tissue the gradients for the real and imaginary parts of the constant were different. The implications of these results on the distribution of water in biological tissues are discussed.

A multiple-registered architecture is described for 180 MHz 16 Mbit synchronous DRAM. The proposed architecture realizes a flexible control of critical timings such as I/O line busy time and achieves an operation at 180 MHz clock rate with area penalty of only 5.4% over the conventional DRAM.

This paper describes the recent progress in the device performance of the uni-traveling-carrier photodiode (UTC-PD). The UTC-PD utilizes only electrons as the active carriers and this unique feature is the key to achieving excellent high-speed and high-output characteristics simultaneously. The achieved performance includes a record 3-dB bandwidth (f3dB) of 310 GHz, a high output current over 180 mA with an f3dB of 65 GHz, a high linearity of up to 80 mA, and a zero-bias operation with an f3dB of 230 GHz and an output peak current of 6.8 mA.

A plastics such as polycarbonate take a graded birefringent orientation when a high dc ununiform electric field is applied to its molten phase. This ununiformity is maintained even in a solid phase after decreasing the temperature. Therefore, the plastic plate operating as a variable retardation plate is easily and inexpensively fabricated by using this bulk plastics with graded birefringence.

The uni-traveling-carrier photodiode (UTC-PD) is an innovative PD that has a unique operation mode in which only electrons act as the active carriers, resulting in ultrafast response and high electrical output power at the same time. This paper describes the features of the UTC-PD and its excellent performance. In addition, UTC-PD-based optoelectronic devices integrated with various elements, such as passive and active devices, are presented. These devices are promising for various applications, such as millimeter- and submillimeter-wave generation up to the terahertz range and ultrafast optical signal processing at data rates of up to 320 Gbit/s.

We have been studying on subthreshold characteristics of SOI (Silicon-On-Insulator) MOSFET's in terms of substrate bias dependence using a one-dimensional subthreshold device simulator based on Poisson equation in an SOI multilayer structure for estimating structural parameters of real devices. Here, we consider the quantum mechanical effects in the electron inversion layer of thin SOI MOSFET's, such as the two-dimensionally quantized electron states and transports, with a self-consistent solver of Poisson and Schrodinger equations and a mobility model by the relaxation time approximation. From results of simulations, we found a significant difference between this model and the classical model and concluded that the quantum mechanical effects need to be considered in analizing thin-film SOI devices.

The use of an interface-planarization (IP) prism in millimeter-wave ellipsometry is proposed to achieve reproducible measurements of soft, protean, and non-flat samples. The complex relative dielectric constants of a slice of bovine tissue were successfully measured at frequencies from 90 to 140 GHz using the IP prism to confirm its applicability. The use of the IP prism was found to be advantageous for protecting the sample surface from the desiccation during the measurements.

Threshold voltage shift in high frequency operation of 0.3µm and 0.35µm gate SOI CMOS is experimentally studied, using supply current measurement of inverter chains as test structures. The threshold voltage shift is obtained from the measurement of the leak currents in DC and high frequency condition. For a large supply voltage the electron-hole generation current becomes dominant, resulting in lowered threshold voltage, while the threshold voltage becomes higher than DC case for a low supply voltage. A reasonable relation of the threshold voltage shift and average electric field in the channel is obtained in this study. This method will be useful as a measure of "substrate current" for floating body SOI CMOS.

Generation of secure signatures suitable for spread-spectrum video watermarking is proposed. The method embeds a message, which is a two-dimensional binary pattern, into a three-dimensional volume, such as video, by addition of a signature. The message can be a mark or a logo indicating the copyright information. The signature is generated by shuffling or permuting random matrices along the third or time axis so that the message is extracted when they are accumulated after demodulation by the correct key. In this way, a message is hidden in the signature having equal probability of decoding any variation of the message, where the key is used to determine which one to extract. Security of the proposed method, stemming from the permutation, is evaluated as resistance to blind estimation of secret information. The matrix-based permutation allows the message to survive the spatial down-sampling without sacrificing the security. The downside of the proposed method is that it needs more data or frames to decode a reliable information compared to the conventional spread-spectrum modulation. However this is minimized by segmenting the matrices and applying permutation to sub-matrices independently. Message detectability is theoretically analyzed. Superiority of our method in terms of robustness to blind message estimation and down-sampling is verified experimentally.

Generally it is said that a fuzzy control system has fault tolerant properties, but it is not clearly studied. In this paper, first, the influence of faults in fuzzy control systems is examined. Errors given by fault simulation are not negligible. However, no fault detecting method is applied in the realized fuzzy control systems. Then a fault-checking method to detect faults is proposed in this paper.

This paper reviews the operation, design, and performance of the uni-traveling-carrier-photodiode (UTC-PD). The UTC-PD is a new type of photodiode that uses only electrons as its active carriers and its prime feature is high current operation. A small signal analysis predicts that a UTC-PD can respond to an optical signal as fast as or faster than a pin-PD. A comparison of measured pulse photoresponse data reveals how the saturation mechanisms of the UTC-PD and pin-PD differ. Applications of InP/InGaAs UTC-PDs as optoelectronic drivers are also presented.

A uni-traveling-carrier refracting-facet photodiode, a short-stab bias circuit, and a patch antenna are monolithically integrated to make a compact and low-cost photonic millimeter-wave emitter for fiber-radio applications. The device emits the maximum effective radiation power of 173 dBm at 60 GHz including a directive gain of the patch antenna.

We developed compact high-power photonic millimeter-wave emitter (PME) modules for 60-GHz fiber radio links. The PME chip is a monolithic integration of a uni-traveling-carrier photodiode (UTC-PD) and an antenna. One module was fabricated by attaching the chip and a plastic housing to a metal substrate, and the equivalent-isotropic radiated power (EIRP) of over 8 dBm was obtained with weak directivity of the radiated pattern. This module is suitable for point-to-multi-point communication. It is very compact, 29 24 6 mm. A module whose antenna gain was increased by attaching a dielectric lens to it was also fabricated, and the estimated EIRP of 18 dBm was obtained. This type of module is suitable for point-to-point communication and it too is compact, 29 24 17.5 mm. We achieved high-speed error-free data transmission of 1.25- and 2.5-Gbit/s phase-shift keyed (PSK) signal. The maximum distances of free-space propagation were estimated to be 18.2 and 8.9 m at bit rates of 1.25 and 2.5 Gbit/s, respectively.

A new method for hiding information in digital images is proposed. Our method differs from existing techniques in that the information is hidden in a mixture of colors carefully tuned on a specific device according to the device's signal-to-luminance (gamma) characteristics. Because these reproduction characteristics differ in general from device to device and even from model to model, the hidden information appears when the cover image is viewed on a different device, and hence the hiding property is device-dependent. To realize this, we modulated a cover image using two identically-looking checkerboard patterns and switched them locally depending on the hidden information. Reproducing these two patterns equally on a different device is difficult. A possible application of our method would be secure printing where an image is allowed to be viewed only on a screen but a warning message appears when it is printed.

This paper reports the performance of an AC-voltage sensor with a LiNbO3 integrated retroreflective structure based on the Y-junction Mach-Zehnder interferometer. This structure is capable of realizing a low-cost sensor chip because of the small chip size and single optical-fiber connection. In the sensitivity and frequency response evaluation, detection sensitivities of 6.3 µ V / Hz have been measured with a frequency response from 6 Hz to 2 GHz. These measurement limitations were also analyzed theoretically and compared with the experimental results. This unique sensor enables precise voltage measurement in an EMI environment, even inside a computer.

The power dissipation tolerances for InP/ InGaAs uni-travelling-carrier photodiodes (UTC-PDs) and pin-PDs under high power optical inputs are compared. Catastrophic failures occur at constant power dissipations of 240 and 160mW for the UTC-PDs and pin-PDs, respectively. Scanning electron microscope observations confirm that the areas of destruction are located in the high electric-field region in the depletion layer.

As new nonlinear optical materials, several organic crystals such as N, N-dimethyl-p-nitroaniline and 5-methyl-2-nitrobenzoic acid have been grown in the form of crystal fiber from the melts. These crystal fibers with a 100µm core diameter and a 10 mm length generated an efficient SHG of Nd : glass laser. The observed SHG intensities were comparable to that of NBD-cloride crystal fiber.

Two types of low-coherence millimeter-wave sources for photonic millimeter-wave ellipsometry are compared. A broadband signal (125-GHz bandwidth) or a narrowband one (0.5-GHz bandwidth) is used to measure the complex relative dielectric constants of purified water, and the narrowband signal is revealed to be suitable for accurate measurement.